december 2013 FDH210N08 ? n-channel unifet tm mosfet ?2007 fairchild semiconductor corporation FDH210N08 rev. c0 www.fairchildsemi.com 1 FDH210N08 n-channel unifet tm mosfet 75 v, 210 a, 5.5 m features ? r ds(on) = 4.65 m (typ.) @ v gs = 10 v, i d = 125 a ? low gate charge (typ. 232 nc) ? low c rss (typ. 262 pf) ? 100% avalanche tested ? improved dv/dt capability applications ? synchronous rectification for atx / server / telecom psu ? battery protection circuit ? motor drives and uninterruptible power supplies description unifet tm mosfet is fairchild semiconductors high voltage mosfet family based on planar stripe and dmos technology. this mosfet is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. this device family is suitable for switching power converter applications such as power factor correction (pfc), flat panel display (fpd) tv power, atx and electronic lamp ballasts. g d s to-247 g s d absolute maximum ratings thermal characteristics symbol parameter FDH210N08 unit v dss drain-source voltage 75 v i d drain current 210 a - continuous (t c = 25 o c) - continuous (t c = 100 o c) 132 a i dm drain current - pulsed (note 1) 840 a v gss gate-source voltage 20 v e as single pulsed avalanche energy (note 2) 9375 mj i ar avalanche current (note 1) 210 a e ar repetitive avalanche energy (note 1) 46.2 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 o c) 462 w - derate above 25 o c 3 . 7 o c w / t j , t stg operating and storage temperature range -55 to +175 o c t l maximumlead temperature for soldering, 1/8 from case for 5 seconds 300 o c symbol parameter FDH210N08 unit r jc thermal resistance, junction-to-case , max. 0.27 o c/w r ja thermal resistance, junction-to-ambient , max. 40 o c/w t c = 25c unless otherwise noted.
FDH210N08 ? n-channel unifet tm mosfet ?2007 fairchild semiconductor corporation FDH210N08 rev. c0 www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25c unless otherwise noted. notes: 1. repetitive rating: pulse-width li mited by maximum junction temperature. 2. l = 0.4 mh, i as = 125 a, v dd = 50 v, r g = 25 , starting t j = 25c. 3. i sd 125 a, di/dt 260 a/s, v dd bv dss , starting t j = 25 c. 4. essentially independent of operating temperature typical characteristics. part number top mark package packing method reel size tape width quantity FDH210N08 FDH210N08 to-247 tube n/a n/a 30 units symbol parameter test conditions min typ max unit off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a7 5- -- -v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c-- 0.1 --v c / o i dss zero gate voltage drain current v ds = 75 v, v gs = 0 v -- -- 20 a v ds = 60 v, t j = 150 o c -- -- 250 a i gssf gate-body leakage current, forward v gs = 20 v, v ds = 0 v -- -- 200 na i gssr gate-body leakage current, reverse v gs = -20 v, v ds = 0 v -- -- -200 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a2 . 0- -4 . 0v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 125 a -- 4.65 5.5 m ? g fs forward transconductance v ds = 25 v, i d = 125 a -- 200 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 8743 11340 pf c oss output capacitance -- 2134 2778 pf c rss reverse transfer capacitance -- 262 393 pf switching characteristics t d(on) turn-on delay time v dd = 37.5 v, i d = 69 a, r g = 25 ? (note 4) -- 100 210 ns t r turn-on rise time -- 410 830 ns t d(off) turn-off delay time -- 630 1270 ns t f turn-off fall time -- 290 590 ns q g total gate charge v ds = 60 v, i d = 125 a, v gs = 10 v -- 232 301 nc q gs gate-source charge -- 58 -- nc q gd gate-drain charge -- 77 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 210 a i sm maximum pulsed drain-source diode forward current -- -- 840 a v sd drain-source diode forward voltage v gs = 0 v, i s = 125 a -- -- 1.4 v t rr reverse recovery time v gs = 0 v, i s = 125 a, di f / dt = 100 a/ s -- 123 -- ns q rr reverse recovery charge -- 420 -- nc (note 4)
FDH210N08 ? n-channel unifet tm mosfet ?2007 fairchild semiconductor corporation FDH210N08 rev. c0 www.fairchildsemi.com 3 typical performance characteristics 0.1 1 10 100 500 * notes : 1. 250 s pulse test 2. t c = 25 o c v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v i d , drain current [a] v ds , drain-source voltage [v] 2.3 246810 1 10 100 * notes : 1. v ds = 25v 2. 250 s pulse test -55 o c 25 o c 175 o c i d , drain current (a) v gs , gate-source voltage (v) 500 0.20.4 60. 0.8 01. 1.2 41. 1.6 1 10 100 1000 v gs = 0v 175 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0 50 100 150 200 250 300 350 400 0.004 0.005 0.006 * note : t j = 25 o c v gs = 20v v gs = 10v r ds(on) [ ? ] , drain-source on-resistance i d , drain current [a] figure 6. gate charge characteristics v ds , drain-source voltage [v] figure 5. capacitance characteristics 0 50 100 150 200 250 0 2 4 6 8 10 * note : i d = 125a v ds = 20v v ds = 40v v ds = 60v v gs , gate-source voltage [v] q g , total gate charge [nc] figure 2. transfer characteristics figure 1. on-region characteristics figure 3. on-resistance variation vs. drain current and gate voltage figure 4. body diode forward voltage variation vs. source current and temperatue 10 1- 10 0 10 1 0 4000 8000 12000 16000 20000 24000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd * note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] 30
FDH210N08 ? n-channel unifet tm mosfet ?2007 fairchild semiconductor corporation FDH210N08 rev. c0 www.fairchildsemi.com 4 typical performance characteristics (continued) -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * notes : 1. v gs = 0v 2. i d = 1ma bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1. v gs = 10v 2. i d = 125a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 10 0 10 1 10 2 10 2- 10 1- 10 0 10 1 10 2 10 3 10 4 10 ms 1 ms 30 s dc 100 s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 175 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] figure 9. maximum safe operating area 25 50 75 100 125 150 175 0 50 100 150 200 250 i d , drain current [a] t c , case te mperature [ o c ] limited by package figure 10. maximum drain current vs. case temperature figure 7. breakdown voltage variation vs. temperature figure 8. on-resistance variation vs. temperature t 1 , rectangular pulse duration [sec] figure 11. transient the rmal response curve 10 -5 10 4- 10 -3 10 2- 10 1- 10 0 10 1 10 2 0.001 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 * notes : 1. z jc (t) = 0.27 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) d = 0.5 single pulse z jc (t),thermal response [ o c/w]
FDH210N08 ? n-channel unifet tm mosfet ?2007 fairchild semiconductor corporation FDH210N08 rev. c0 www.fairchildsemi.com 5 figure 12. gate charge test circuit & waveform t on figure 13. resistive switching test circuit & waveforms t t pp figure 14. unclamped inductive switching test circuit & waveforms v gs v ds 10% 90% t d(on) t r t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p v gs v gs i g = const.
FDH210N08 ? n-channel unifet tm mosfet ?2007 fairchild semiconductor corporation FDH210N08 rev. c0 www.fairchildsemi.com 6 forward voltage drop figure 15. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FDH210N08 ? n-channel unifet tm mosfet ?2007 fairchild semiconductor corporation FDH210N08 rev. c0 www.fairchildsemi.com 7 mechanical dimensions figure 16. to-247, molded, 3-lead, jedec variation ab package drawings are provided as a servic e to customers considering fairchild co mponents. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packag ing area for the most recent package drawings: http://www.fairchildsemi.com/package/packagedetails.html?id=pn_to247-003
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